Power management is becoming increasingly challenging in the corporate industry. In addition to the competition they have to handle, they certainly don’t wish to handle a power outage, fluctuation, voltage drop etc. Greater power density, higher efficiency and lower SMPS cost are thus increasingly in demand.
Infineon Technologies has introduced a family of power semiconductors for use in DC/DC converter applications. The semiconductor called, OptiMOS 3 M series 30-V N-channel MOSFET family is targeted at applications in which only a 5-V drive is available.
This can be used with various electronic devices such as graphic cards, industrial controls, embedded converters, switched-mode power supplies and many slots on notebook computer motherboards. They can also be used with hand-held mobile devices. The OptiMOS 3 M 30-V power MOSFET family consists of 18 devices, which are available in SSO8 and S3O8 packages. Power efficiency or usage is maximized by minimizing power dissipation by a component – on-resistance (RDS(on)) at 4.5 V.
BSC100N03MS G, with a 10-milliohm RDS(on) provides a maximum gate charge rating of 11 nC which means a reduction in gate charge as compared to a conventional semiconductor. The OptiMOS 3 M series MOSFETs are available in two packages – 30 mm SSO8 (SuperSO8) and 3 x 3-mm S3O8 (Shrink SuperSO8).
Infineon claims that an OptiMOS 3 M series MOSFET in a SuperSO8 package, can achieve an RDS(on) of 2.0 milliohms at 4.5 V (1.6 milliohms at 10 V), which delivers a 38 percent improvement over the nearest competitor in a comparable package and in a S3O8 package, a RDS(on) as low as 4.3 milliohms at 4.5 V (3.5 milliohms at 10 V) can be achieved. This is said to be a reduction of almost 50 percent in RDS(on) over the nearest competitor in the same package. Other features include non-moisture sensitivity, 30-V breakdown voltage ensures safe operation during spikes and has the highest immunity to dynamic turn-on.
The BSC016N03MS G, with a RDS(on) of 1.6 milliohms, in a SSO8 package is priced at $0.88 in quantities of 10,000. In a S3O8 package, the price of a 3.5-milliohm BSZ035N03MS G device is $0.56 in quantities of 10,000.
via : Powermanagement Designline
